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| NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 60 -55 RDS(ON) 55m 80m ID 4.5A -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel 60 20 4.5 4 20 2 1.3 -55 to 150 275 -55 20 -3.5 -3 -20 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg TL W C SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A VDS = 0V, VGS = 20V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 -55 1.0 -1.0 1.5 -1.5 2.5 -2.5 100 100 V MIN TYP MAX UNIT nA 1 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free VDS = 48V, VGS = 0V VDS = -44V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch 1 -1 A 10 -10 VDS = 40V, VGS = 0V, TJ = 55 C N-Ch VDS = -36V, VGS = 0V, TJ = 55 C P-Ch On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 4A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 55 90 42 60 14 9 75 150 A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -3A RDS(ON) VGS = 10V, ID = 4.5A VGS = -10V, ID = -3.5A m 55 80 Forward Transconductance1 gfs VDS = 10V, ID = 4.5A VDS = -5V, ID = -3.5A S DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 25V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 650 760 80 90 35 40 12.5 15 2.4 2.5 2.6 3.0 nC 18 21 pF Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Crss VGS = 0V, VDS = -30V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 4.5A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -3.5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd 2 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) N-Channel VDD = 30V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11 7 8 10 19 19 6 12 20 14 18 20 35 34 15 22 nS tr ID 1A, VGS = 10V, RGEN = 6 P-Channel VDD = -30V td(off) tf N-Ch P-Ch ID -1A, VGS = -10V, RGEN = 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = IS A, VGS = 0V IF = IS A, VGS = 0V Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 1.3 -1.3 2.6 -2.6 1 -1 V A Pulsed Current 3 ISM VSD Forward Voltage1 N-Ch P-Ch REMARK: THE PRODUCT MARKED WITH "P5506NVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125 C 1 0.1 25 C 0.01 -55 C 0.001 0.0001 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 4 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free 5 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 -Is - Reverse Drain Current(A) 1 T A = 125 C 0.1 25 C -55 C 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 6 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free 7 AUG-17-2004 NIKO-SEM www..com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G mm Dimension Max. 5.0 4.0 6.2 0.51 H I J K L 1.75 0.25 Typ. 4.9 3.9 6.0 0.445 1.27 Min. 0.5 0.18 Typ. 0.715 0.254 0.22 Max. 0.83 0.25 4.8 3.8 5.8 0.38 0 4 8 1.35 0.1 1.55 0.175 M N J F D E G I H K B C A 8 AUG-17-2004 |
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